Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

The piezoelectric and spontaneous polarization of wurtzite ScxAl1−xN, GaxAl1−xN, InxAl1−xN ternary compounds dramatically affects the electrical properties pseudomorphic MexAl1−xN/GaN, MexAl1−xN/AlN, MexAl1−xN/InN heterostructures devices (Me: = Sc, Ga, In), due to bound interface charges caused by gradients in at surfaces heterointerfaces. We have calculated undoped, metal polar ScxAl1−xN barrier layers (0 ≤ x 0.5) pseudomorphically grown on InN, GaN, AlN buffer layers, order compare induced surface determined ones predicted measured with GaxAl1−xN barriers 1.0). To facilitate inclusion future simulations, we give explicit prescriptions calculate for arbitrary thicknesses up 50 nm each III-N alloy heterostructures. In addition, predict electron sheet confined positive taking limitations epitaxial growth strain critical into account. Based these results, provide a detailed comparison resistances current-carrying capabilities investigated, pointing superior potential ScAlN/GaN based processing improved high mobility transistors high-frequency power electronic applications.